BAS40T Datasheet, PDF (1/4 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
SOT-523
BAS40T/-04T/-05T/-06T SCHOTTKY BARRIER DIODE
FEATURES
z Low forward voltage
z Fast switching
BAS40T MARKING:43
MARKING:
BAS40T
BAS40-04T MARKING: 44 BAS40-05T MARKING: 45 BAS40-06T MARKING: 46
BAS40-04T
BAS40-05 T
BA S40-06 T
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Electrical Characteristics @Ta=25℃
Parameter
Reverse Breakdown Voltage
Symbol Min
V _(BR)
40
V_F1
Forward Voltage
V_F2
Reverse Current
I_R
Diode Capacitance
C_D
Reverse Recovery Time
t_rr
Symbol
V_RRM
V_RWM
V_R
I_FM
I_O
I_FSM
P_D
R_θJA
T_J
T_STG
Limit
40
200
200
0.6
150
667
125
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
Typ Max Unit
V
0.38
V
1
V
0.2
μA
5
pF
5
ns
Conditions
I_R=10μA
I_F=1mA
I_F=40mA
V_R=30V
V_R=0,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
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1
E,Oct,2015