BAS40 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier double diodes

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS40/-04/-05/-06 SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage
z Fast Switching
SOT-23
BAS40 MARKING: 43•
MARKING:
BAS40
BAS40-06 MARKING: 46
BAS40-05 MARKING：45
BAS40-06
BAS40-05
BAS40-04
B AS40-04 MARKING：44
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
V_RRM
V_RWM
V_R
I_FM
40
200
Power dissipation
P_D
200
Thermal resistance junction to ambient
R_θJA
500
Junction temperature
T_J
125
Storage temperature range
T_STG
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V_(BR)
I_R=10μA
40
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
I_R
V_R=30V
V_F
I_F=1mA
I_F=40mA
C_D
V_R=0,f=1MHz
t _rr
I_rr=1mA, I_R=I_F=10mA
R_L=100Ω
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1
Unit
V
mA
mW
℃/W
℃
℃
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
ns
E,Oct,2015