BAS316 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BAS316 SWITCHING DIODE
FEATURES
 Very Small Plastic Package
 High Switching Speed
APPLICATIONS
 High-Speed Switching in e.g. Surface Mounted Circuits
MARKING: A6_·
SOD-323
A6
A6
The marking bar indicates the cathode
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
V_RRM
V_R
I_O
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
I_FSM
Non-repetitive Peak Forward Surge Current@t= 8.3ms
P_D
Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_j
Junction Temperature
T_stg
Storage Temperature
Value
85
75
250
2.0
250
500
150
-55~+150
Unit
V
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=100μA
Reverse current
IR
VR=25V
VR=75V
IF=1mA
Forward voltage
VF
IF=10mA
IF=50mA
IF=150mA
Total capacitance
Ctot
VR=0V,f=1MHz
Reverse recovery time
trr
IF= IR=10mA, Irr=0.1×IR
Min Typ Max Unit
100
V
30
nA
1
μA
0.715
0.855
V
1
1.25
1.5
pF
4
ns
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1
D,Mar,2015