BAS21T Datasheet, PDF (1/4 Pages) Diodes Incorporated – SURFACE MOUNT FAST SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
BAS21T SWITCHING DIODE
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
MARKING :T3
SOT-523
1
3
2
T3
T3
Solid dot = Green molding compound device,
if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Symbol
V_RRM
V_RWM
V_R
I_FM
I_O
I_FSM
P_D
R_θJA
T_J
T_STG
Limit
250
400
200
2.5
150
833
150
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
Test conditions
Min
Max
Unit
V_(BR)
I_R= 100μA
250
V
I_R
V_R=200V
V_F
I_F=100mA
I_F=200mA
C_T
V_R=0V,f=1MHz
t _rr
I_F=I_R=30mA,I_rr=0.1XI_R,
R_L=100Ω
100
nA
1
V
1.25
5
pF
50
ns
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1
B,Oct,2014