BAS19 Datasheet, PDF (1/4 Pages) NXP Semiconductors – General purpose diodes

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS19/BAS20 SWITCHING DIODE
FEATURE
 Fast Switching Speed
 Surface Mount Package Ideally Suited for Automatic Insertion
 For General Purpose Switching Applications
 High Conductance
MARKING:
BAS19:JP
BAS20:JR
SOT-23
JP
JR
Solid dot = Green molding compound device,
if none,the normal device.
JP
JR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VRRM
VRWM
IO
IFSM
Pd
RθJA
TJ
Tstg
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction temperature
Storage Temperature
BAS19
BAS20
120
200
100
150
200
2.5
250
500
150
-55 ~ +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Reverse breakdown voltage
Reverse current
BAS19
BAS20
BAS19
BAS20
V_(BR)
I_R
IR=100μA
VR=100V
VR=150V
Forward voltage
Diodes capacitance
Reveres recovery time
IF=100mA
V_F
IF=200mA
C_D
VR=0V, f=1MHz
t_rr
IF=IR=30mA,Irr=0.1*IR
Min Typ Max
120
200
0.1
1
1.25
5
50
Unit
V
V
mA
A
mW
℃/W
℃
℃
Unit
V
μA
V
V
pF
ns
www.cj-elec.com
1
C,Mar,2016