BAP50-03 Datasheet, PDF (1/4 Pages) NXP Semiconductors – General purpose PIN diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BAP50-03 GENERAL PURPOSE PIN DIODE
SOD-323
FEATURES
y Low diode capacitance
y Low diode forward resistance
MARKING: A81
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Junction Temperature
Storage Temperature
Electrical Ratings @Ta=25℃
Parameter
Continuous reverse voltage
Forward voltage
Reverse current
Diode capacitance
Diode forward resistance
Symbol
V_R
I_F
PD
R_θJA
T_j
T_STG
Limit
50
50
200
85
150
-55~+150
Unit
V
mA
mW
℃/W
℃
℃
Symbol Min Typ Max Unit
Conditions
V_R
50
V
I_R=10µA
V_F
1.1
V
I_F=50mA
I_R
100 nA
V_R=50V
C_d1
0.91 pF
V_R=0V,f=1MHz
C_d2
0.55 pF
V_R=1V,f=1MHz
C_d3
0.35 pF
V_R=5V,f=1MHz
r_D
40
Ω I_F=0.5mA , f=100MHz; note1
r_D
25
Ω I_F=1mA , f=100MHz;note1
r_D
5
Ω I_F=10mA , f=100MHz;note1
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
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1
D,Mar,2015
A