B772-TO-92 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
B772 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
625 mW (Tamb=25℃)
Collector current
I_CM:
Collector-base voltage
-3 A
V_(BR)CBO:
-40 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA ,IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO
IC= -10 mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100µA, IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40 V, IE=0
-1
µA
Collector cut-off current
ICEO
VCE=-30 V, IB=0
-10
µA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-1
µA
DC current gain
hFE(1)
VCE= -2V, IC= -1A
60
400
hFE(2)
VCE=-2V, IC= -100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5
V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=-2A, IB= -0.2A
VCE= -5V, IC=-0.1A
fT
50
f = 10MHz
-1.5
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400