B772-SOT-89 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
B772 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
500 mW (Tamb=25℃)
Collector current
I_CM:
Collector-base voltage
-3 A
V_(BR)CBO:
-40 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLETOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
CLASSIFICATION OF h_FE(1)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA , IE=0
-40
Collector-emitter breakdown voltage V(BR)CEO
IC= -10 mA , IB=0
-30
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 µA, IC=0
-6
Collector cut-off current
ICBO
VCB= -40 V, IE=0
Collector cut-off current
ICEO
VCE=-30 V, IB=0
Emitter cut-off current
IEBO
VEB=-6V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE= -2V, IC= -1A
60
VCE=-2V, IC= -100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=-2A, IB= -0.2A
VCE= -5V, C=-0.1A
fT
50
f = 10MHz
MAX
-1
-10
-1
400
-0.5
-1.5
UNIT
V
V
V
µA
µA
µA
V
V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400