B5817W_15 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B5817W-5819W SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
SOD-123
MARKING:
B5817W:SJ
B5818W:SK
B5819W:SL
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol B5817W
B5818W
Non-Repetitive Peak Reverse Voltage
V_RM
20
Peak Repetitive Peak Reverse Voltage
V_RRM
Working Peak Reverse Voltage
DC Blocking Voltage
V_RWM
20
V_R
RMS Reverse Voltage
V_R(RMS)
14
Average Rectified Output Current
I_O
Non-repetitive Peak Forward Surge Current
@t=8.3ms
I_FSM
Repetitive Peak Forward Current
I_FRM
Power Dissipation
PD
Thermal Resistance Junction to
Ambient
R_θJA
Junction temperature
TJ
Storage Temperature
T_STG
30
30
21
1
9
1.5
500
200
125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
B5819W
40
40
28
Unit
V
V
V
A
A
A
mW
℃/W
℃
℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test conditions
Min
V_(BR)
I_R= 1mA
B5817W
20
B5818W
30
B5819W
40
V_R=20V
I_R
V_R=30V
V_R=40V
B5817W
B5818W
B5819W
B5817W I_F=1A
I_F=3A
V_F
B5818W I_F=1A
I_F=3A
B5819W I_F=1A
I_F=3A
C_D
V_R=4V, f=1MHz
Max
Unit
V
1
mA
0.45
V
0.75
0.55
V
0.875
0.6
V
0.9
120
pF
www.cj-elec.com
1
D,Mar,2015