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| B5817WS Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
B5817WS SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD:
200 mW (Tamb=25â)
Collector current
IF:
1A
Collector-base voltage
VR:
20 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOD-323
+
-
MARKING: SJ
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)
IR
VF
CD
Test conditions
IR= 1mA
VR=20V
IF=1A
IF=3A
VR=4V, f=1MHz
MIN
MAX
UNIT
20
V
1
mA
0.45
V
0.75
120
pF
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