B2020W Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B2020W SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Very Small SMD Package
APPLICATIONS
z Low Voltage Rectification
z High Efficiency DC/DC Conversion
z Switch Mode Power Supply
z Inverse Polarity Protection
z Low Power Consumption Applications
MARKING: SH
SOD-123
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
Value
V_RRM
Peak Repetitive Reverse Voltage
20
V_RWM
Working Peak Reverse Voltage
V_R(RMS)
RMS Reverse Voltage
14
I_F
Continuous Forward Current
2
I_FSM
Non-repetitive Peak Forward Surge Current @ t=8.3ms
9
Power Dissipation
P_D
Note1
300
Note2
670
Thermal Resistance from Junction to Ambient Note1
333
R_ΘJA
Note2
149
T_j
Junction Temperature
125
T_stg
Storage Temperature
-55~+150
1:Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2:Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm².
Unit
V
V
A
A
mW
mW
℃/W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse current
Symbol
V_(BR)
I_R
Forward voltage
V_F*
Total capacitance
C_tot
*Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
www.cj-elec.com
Test conditions
I_R=1mA
V_R=10V
V_R=20V
I_F=1A
I_F=2A
V_R=4V,f=1MHz
1
Min Typ Max Unit
20
V
80
μA
100
0.45
V
0.55
120
pF
D,Mar,2015