A94 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A94 TRANSISTOR PNP
FEATURES
TO 92
Power dissipation
P_CM: 0.625 W
Tamb=25
Collector current
I_CM: -0.2 A
Collector-base voltage
V_(BR)CBO : -400 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
1.EMITTER
2.BASE
3. COLLECTOR
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V (BR) CBO Ic= -100 A IE=0
-400
Collector-emitter breakdown voltage V (BR) CEO IC= -1 mA IB=0
-400
Emitter-base breakdown voltage
V (BR) EBO IE=-100 A IC=0
-5
Collector cut-off current
ICBO
VCB=-400 V, IE=0
Collector cut-off current
ICEO
VCE=-400 V, IB=0
Emitter cut-off current
IEBO
VEB= -4 V, IC=0
hFE 1
VCE=-10V, IC=-10 mA
80
DC current gain
hFE 2
VCE=-10V, IC=-1m A
70
hFE 3
VCE=-10V, IC=-100 mA
60
Collector-emitter saturation voltage
VCE (sat)
VCE (sat)
IC=-10 mA IB=-1m A
IC=-50 mA IB=-5m A
Base-emitter saturation voltage
Transition frequency
VBE (sat)
IC=-10 mA IB= -1 mA
fT
VCE=-20V IC=-10mA
f =30MHz
50
123
TYP
MAX UNIT
V
V
V
-0.1
A
-5
A
-0.1
A
300
-0.2
V
-0.3
V
-0.75
V
MHz