A92 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A92 TRANSISTOR PNP
FEATURES
TO 92
Power dissipation
P_CM : 0.625W Tamb=25
Collector current
I_CM: -0.5 A
Collector-base voltage
V_(BR)CBO : -300V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25 unless
1.EMITTER
2.BASE
3.COLLECTOR
otherwise
123
specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100 A IE=0
-300
V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA IB=0
-300
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 A IC=0
-5
Collector cut-off current
ICBO
VCB= -200 V IE=0
V
-0.25
A
Emitter cut-off current
IEBO
VEB= -5 V IC=0
-0.1
A
hFE 1
VCE= -10 V, IC=- 1 mA
60
DC current gain
hFE 2
VCE= -10V, IC = -10 mA
80
250
hFE 3
VCE= -10 V, IC= -80 mA
60
Collector-emitter saturation voltage
VCE(sat)
IC= -20 mA, IB= -2 mA
-0.2 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= -20 mA, IB= -2 mA
VCE= -20 V, IC= -10 mA
f = 30MHz
50
-0.9 V
MHz
CLASSIFICATION OF h_FE(2)
Rank
A
Range
80-100
B₁
100-150
B₂
150-200
C
200-250