A733LT1 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A733LT1
FEATURES
TRANSISTOR PNP
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM : 0.2 W Tamb=25
Collector current
I_CM : -0.15
A
Collector-base voltage
V_(BR)CBO : -60
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25 unless
otherwise
Unit : mm
specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= -5 A IE=0
-60
V
Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -50 A IC=0
-5
V
Collector cut-off current
ICBO
VCB= -60 V , IE=0
-0.1
A
Emitter cut-off current
IEBO
VEB= -5 V , IC=0
-0.1
A
DC current gain
HFE 1
VCE= -6 V, IC= -1m A
120
475
Collector-emitter saturation voltage
VCE(sat)
IC= -100mA, IB=- 10m A
-0.18 -0.3
V
Transition frequency
VCE= -6 V, IC=-10mA
fT
50
f = 30MHz
MHz
CLASSIFICATION OF H_FE(1)
Rank
Range
L
120-200
H
200-475
MARKING
CS