A44 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A44 TRANSISTOR NPN
TO 92
FEATURES
Power dissipation
P_CM : 0.625 W
Collector current
I_CM : 0.2 A
Collector-base voltage
Tamb=25
1.EMITTER
2.BASE
3. COLLECTOR
V_(BR)CBO : 400 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise
123
specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
400
V
Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100 A
IC=0
5
V
Collector cut-off current
ICBO
VCB=400 V , IE=0
0.1
A
Collector cut-off current
ICEO
VCE=400 V ,
5
A
Emitter cut-off current
IEBO
VEB= 4 V , IC=0
0.1
A
HFE 1
VCE=10V , IC=10 mA
80
300
DC current gain
HFE 2
VCE=10V, IC=1m A
70
HFE 3
VCE=10V ,IC=100 mA
60
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=10 mA, IB=1m A
IC=50 mA, IB=5m A
0.2
V
0.3
V
Base-emitter sataration voltage
VBE(sat)
IC=10 mA, IB= 1 mA
0.75
V
Transition frequency
VCE=20V, IC=10mA
fT
50
f =30MHz
MHz