A42 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A42 TRANSISTOR NPN
FEATURES
TO 92
Power dissipation
P_CM : 0.625 W Tamb=25
Collector current
I_CM : 0.5
A
Collector-base voltage
V_(BR)CBO : 300 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
1.EMITTER
2.BASE
3.COLLECTOR
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
300
V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
5
Collector cut-off current
ICBO
VCB= 200 V IE=0
V
0.25
A
Emitter cut-off current
IEBO
VEB= 5 V IC=0
0.1
A
hFE 1
VCE= 10 V, IC= 1 mA
60
DC current gain
hFE 2
VCE= 10V, IC = 10 mA
80
250
HFE 3
VCE= 10 V, IC=30 mA
75
Collector-emitter saturation voltage
VCE(sat)
IC= 20 mA, IB= 2 m A
0.2
V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= 20m A, IB= 2 mA
VCE=20 V, IC= 10 mA
f =30MHz
50
0.9
V
MHz
CLASSIFICATION OF h_FE(2)
Rank
A
Range
80-100
B₁
100-150
B₂
150-200
C
200-250