A1015LT1 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
A1015LT1 TRANSISTOR PNP
FEATURES
Power dissipation
P_CM : 0.2
Collector current
W Tamb=25
I_CM : -0.15 A
Collector-base voltage
V_(BR)CBO : -50
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -100 A IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -0.1mA IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE= -10 A IC=0
-5
Collector cut-off current
ICBO
VCB=-50 V , IE=0
Collector cut-off current
Emitter cut-off current
ICEO
VCE= -50 V , IB=0
IEBO
VEB=- 5V , IC=0
DC current gain
HFE(1)
VCE=-6V, IC= -2m A
130
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC=-100 mA, IB= -10m A
VBE(sat) IC=-100 mA, IB= -10m A
fT
VCE=-10V, IC= -1mA
80
f=30MHz
MAX UNIT
V
V
V
-0.1
A
-0.1
A
-0.1
A
400
-0.3
V
-1.1
V
MHz
CLASSIFICATION OF H_FE(1)
MARKING
BA