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| A1015 Datasheet, PDF (1/4 Pages) Weitron Technology – PNP General Purpose Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A1015 TRANSISTOR (PNP)
FEATURES
z Power dissipation
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to
Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-150
400
312
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
TO-92
1.EMITTER
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= -100μA, IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO IC= -0.1mA, IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE= -100μA, IC=0
-5
Collector cut-off current
ICBO
VCB= -50V,IE=0
Collector cut-off current
ICEO
VCE= -50V, IB=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE= -6V, IC= -2mA
70
Collector-emitter saturation voltage
VCE(sat) IC= -100mA, IB= -10mA
Base-emitter saturation voltage
Transition frequency
Collector Rutput Fapacitance
Noise Iigure
CLASSIFICATION OF hFE
VBE(sat)
IC= -100mA, IB= -10mA
fT
VCE= -10 V, IC= -1mA
f =30MHz
80
Cob
VCB=-10V,IE=0,f=1MHz
NF
VCE= -6 V, IC= -0.1mA,
f =1kHz,RG=10kΩ
Rank
O
Y
Range
70-140
120-240
Typ Max Unit
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
400
-0.3
V
-1.1
V
MHz
7
pF
6
dB
GR
200-400
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