8550S Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550S TRANSISTOR PNP
FEATURE
Power dissipation
P_CM : 0.625 W Tamb=25
Collector current
I_CM : -0.5 A
Collector-base voltage
V_(BR)CBO : -40 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 92
1.EMITTER
2. COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= -100 , IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1 mA IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 A IC=0
-5
V
Collector cut-off current
ICBO
VCB= -40 V , IE=0
-0.1
A
Collector cut-off current
Emitter cut-off current
ICEO
VCE= -20 V , IB=0
IEBO
VEB= - 3 V IC=0
-0.1
A
-0.1
A
DC current gain
hFE 1
VCE= -1 V, IC= -50m A
85
300
hFE 2
VCE= -1 V, IC= -500m A
50
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50 mA
-0.6 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-500mA, IB=-50 mA
VCE=- 6 V, IC=-20mA
150
f =30MHz
-1.2 V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
Range
B
85-160
C
120-200
D
160-300