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8050SS Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR( NPN )
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050SS TRANSISTOR NPN
TO 92
FEATURES
Power dissipation
PCM : 1 W
Tamb=25
Collector current
ICM: 1.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25 unless
1.EMITTER
2. COLLECTOR
3. BASE
123
otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1 mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
5
V
Collector cut-off current
ICBO
VCB= 40 V , IE=0
0.1
A
Collector cut-off current
ICEO
VCE= 20 V , IB=0
0.1
A
Emitter cut-off current
IEBO
VEB= 5 V , IC=0
0.1
A
DC current gain
hFE 1
VCE= 1 V , IC= 100 mA
85
300
hFE 2
VCE= 1 V , IC=800 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC= 800 mA, IB= 80 mA
0.5
V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= 800mA, IB= 80 mA
VCE= 10 V, IC= 50mA
100
f =30 MHz
1.2
V
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300