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| 3DK2222A-SOT-23 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR ( NPN ) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
3DK2222A TRANSISTOR ( NPN )
FEATURES
y Epitaxial planar die construction
y Complementary PNP Type available(MMBT2907ALT1)
MARKING: 1P1
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS* TA=25â unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ, Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICSï¼Tamb=25â
Value
75
40
6
600
300
-55to+150
unless otherwise specifiedï¼
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
HFE(1)
HFE(2)
HFE(3)
IC= 10μAï¼ IE=0
IC= 10mAï¼ IB=0
IE=10μAï¼ IC=0
VCB=70 V , IE=0
VCE=60V , VBE(off)=3V
VEB= 3V , IC=0
VCE=10V, IC= 150mA
VCE=10V, IC= 0.1mA
VCE=10V, IC= 500mA
75
40
6
100
40
42
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
VBE(sat) IC=500 mA, IB= 50mA
fT
VCE=20V, IC= 20mA
f=100MHz
300
td
VCC=30V, VBE(off)=-0.5V
tr
IC=150mA , IB1= 15mA
tS
VCC=30V, IC=150mA
tf
IB1=-IB2=15mA
Units
V
V
V
mA
mW
â
MAX
0.1
0.1
0.1
300
UNIT
V
V
V
μA
μA
μA
0.6
0.3
V
1.2
V
MHz
10
nS
25
nS
225
nS
60
nS
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