 English |
|
|
|
|
|
|
|
| 3DG3332 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DG3332 TRANSISTOR (NPN)
TO-92
FEATURES
ï¬ High breakdown voltage
ï¬ Excellent hFE linearity
ï¬ Large current capacity and wide ASO
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.7
0.625
200
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (TA=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
180
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
160
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=120V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
μA
DC current gain
hFE(1)
VCE=5V, IC=100mA
100
400
hFE(2)
VCE=5V, IC=10mA
80
Collector-emitter saturation voltage
VCE(sat)
IC=250mA,IB=25mA
0.4
V
Base-emitter VDWXUDWLRQ voltage
VBE(sat) IC=250mA,IB=25mA
1.2
V
Collector output capacitance
Cob
VCB=10V, f=1MHz
8
pF
Transition frequency
Turn-on Time
Storage Time
Fall Time
fT
VCE=10V,IC=50mA
ton
tstg
VCC=100V,IC=300mA,
IB1=-IB2=15mA
tf
120
MHz
0.05
μs
1
μs
0.06
μs
CLASSIFICATION of hFE(1)
Rank
Range
R
100-200
S
140-280
T
200-400
www.cj-elec.com
1
C,Dec,2015
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese