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| 3DD13007 Datasheet, PDF (1/1 Pages) Jinan Gude Electronic Device – TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
2 W (Tamb=25â)
Collector current
ICM:
8A
Collector-base voltage
V(BR)CBO:
700 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 1mA, IE=0
700
Collector-emitter breakdown voltage V(BR)CEO
Ic= 10mA, IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA, IC=0
9
Collector cut-off current
ICBO
VCB= 700V, IE=0
Emitter cut-off current
IEBO
VEB=9V, IC=0
DC current gain
hFE(1)
VCE= 5V, IC= 2 A
8
hFE(2)
VCE=5 V, IC=5A
5
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB=0.4A
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
IC=2A, IB= 0.4A
fT
Ic=500mA,VCE=10V
f=1MHZ
4
Cob
VCE=10,IE=0, f=0.1MHz
80
Fall time
Storage time
tf
Vcc=125V, Ic=5A
ts
IB1=-IB2=1A
MAX
1
100
40
30
1
1.2
0.7
3
UNIT
V
V
V
mA
µA
V
V
MHZ
pF
µs
µs
CLASSIFICATION OF hFE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
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