3DD13005 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13005 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 1.5 W Tamb=25
Collector current
I_CM:
4A
Collector-base voltage
V_(BR)CBO : 700 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 220
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 1000 µA IE=0
700
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 1000 µA IC=0
9
Collector cut-off current
ICBO
VCB= 700 V IE=0
1000
Collector cut-off current
Emitter cut-off current
ICEO
VCE= 400 V IB=0
IEBO
VEB= 9 V IC=0
100
1000
DC current gain
hFE
VCE= 5 V, IC= 1000mA
10
40
Collector-emitter saturation voltage
VCE (sat)
IC=2000m A,IB=500 mA
0.6
Base-emitter saturation voltage
VBE (sat)
IC=2000m A, IB= 500mA
1.6
Transition Frequency
Fall time
VCE=10 V, IC=500mA
fT
5
f = 1MHz
tf
IB1=-IB2=0.4A, IC=2A
0.9
Storage time
ts
VCC=120V
4
UNIT
V
V
V
µA
µA
µA
V
V
MHz
µs
µs
CLASSIFICATION OF h_FE
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40