3DD13003_14 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR ( NPN

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
3DD13003 TRANSISTOR ( NPN )
FEATURES
Power Switching Applications
TO-251-3L
1.. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS(T_A=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
700
V
400
V
V_EBO
I_C
PC
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
9
V
1.5
A
1.25
W
T_J, T_stg Junction and Storage Temperature
-55~+150 ℃
ELECTRICALCHARA CTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Collector-base breakdown voltage
V(BR)CBO
I= c= 1mA,IE 0
700
Collector-emitter breakdown voltage V(BR)CEO
Ic== 10 mA,IB 0
400
Emitter-base breakdown voltage
V(BR)EBO
= I_E= 1mA, I_C 0
9
Collector cut-off current
I_CBO
= V_CB= 700V,I_E 0
1
Collector cut-off current
ICEO
= V_CE= 400V,I_B 0
0.5
Emitter cut-off current
IEBO
= V_EB= 9 V, I_C 0
1
DC current gain
h_FE（₁）
V_CE= 5 V, I_C= 0.5 A
8
40
hFE（2）
V_CE= 5 V, I_C= 1.5A
5
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB= 250 mA
0.6
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB= 250mA
1.2
Base-emitter voltage
Transition frequency
Fall time
Storage time
VBE
IE= 2A
3
V_CE=10V,Ic=100mA
fT
5
f =1MHz
tf
I_C= 1A,I_B1=-I_B2=0.2A
0.5
V_CC=100V
t_s
IC=250mA
2
4
Unit
V
V
V
mA
mA
mA
V
V
V
MHz
µs
µs
CLASSIFICATION OF h_FE(1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF t_S
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
www.cj-elec.com
1
E,Oct,2014