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| 3DD13003N9 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003N9 TRANSISTOR (NPN)
TO-126
FEATURES
Power switching applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
700
400
11
1.5
1.25
100
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time
Symbol
Test conditions
V(B= R)CBO IC= 1mA,IE 0
V(BR= )CEO IC=10mA,IB 0
V(= BR)EBO IE= 1mA,IC 0
ICB= O VCB=600V,IE 0
ICE= O VCE=400V,IB 0
= IEBO VEB=9V,IC 0
hFE(= 1) VCE=5V, IC 0.5A
hFE(= 2) VCE=5V, IC 1mA
hF= E(3) VCE=5V, IC 1A
VCE= (sat)1 IC=0.5A,IB 0.1A
= VCE(sat)2 IC=1A,IB 0.2A
VBE= (sat)1 IC=0.5A,IB 0.1A
= VBE(sat)2 IC=1A,IB 0.2A
tS
IC= 250mA
1 . BASE
2. COLLECTOR
3. EMITTER
Min Typ Max
700
400
11
100
500
100
10
40
10
10
0.15
0.25
1
1
2
4
Unit
V
V
V
uA
uA
uA
V
V
V
V
us
CLASSIFICATION of hFE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION of tS
Rank
A1
Range
2-2.5
A2
2.5-3
B1
3-3.5
B2
3.5-4
www.cj-elec.com
1
D,Oct,2014
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