3DD13003N3 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003N3 TRANSISTOR (NPN)
TO-126
FEATURES
z Power switching applications
z Good high temperature
z Low saturation voltage
z High speed switching
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
700
400
9
1.5
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_(BR)C= _BO I_C= 1mA,I_E 0
700
Collector-emitter breakdown voltage
V_(BR)CE= _O I_C=10mA,I_B 0
400
Emitter-base breakdown voltage
V_(B= _R)EBO I_E=1mA,I_C 0
9
Collector cut-off current
I_CBO = V_CB=700V,I_E 0
Collector cut-off current
I_CEO = V_CE=400V,I_B 0
Emitter cut-off current
= I_EBO V_EB=9V,I_C 0
h_FE(1) = V_CE=5V, I_C 0.2A
10
DC current gain
h_FE(2) = V_CE=5V, I_C 1mA
8
h_FE(3)
V_CE=5V, I_C= 1.5A
5
Collector-emitter saturation voltage
V_CE(sat)
I_C=1A,I_B=0.2A
Base-emitter saturation voltage
V_BE(sat)
I_C=1A,I_B=0.25A
Storage time
t_S
I_C= 250mA (UI9600)
2
Typ Max
10
50
10
40
0.5
1.5
4
Unit
V
V
V
μA
μA
μA
V
V
μs
CLASSIFICATION OF h_FE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF t_S
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
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1
D,Oct,2014