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| 3DD13003 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR ( NPN ) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13003 TRANSISTOR ( NPN )
FEATURES
· power switching applications
MAXIMUM RATINGS* TA=25â unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Dissipation
2
W
TJ, Tstg Junction and Storage Temperature
-55-150
â
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFEï¼1ï¼
hFEï¼2ï¼
VCE(sat)
VBE(sat)
VBE
Transition frequency
fT
Fall time
tf
Storage time
ts
Test conditions
Ic= 1000uA, IE=0
Ic= 10 mA, IB=0
IE= 1mA, IC=0
VCB= 700V , IE=0
VCE= 400V, B=0
VEB= 9 V, IC=0
VCE= 5 V, IC= 0.5 A
VCE= 5 V, IC= 1.5A
IC=1000mA,IB= 250 mA
IC=1000mA, IB= 250mA
IE= 2000 mA
VCE=10V,Ic=100mA
f =1MHz
IC=1A, IB1=-IB2=0.2A
VCC=100V
MIN TYP MAX UNIT
700
V
400
V
9
V
1000
µA
500
µA
1000
µA
8
40
5
1
V
1.2
V
3
V
5
MHz
0.5
µs
2.5
µs
CLASSIFICATION OF hFE (1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
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