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| 3DD13002S Datasheet, PDF (1/3 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002S TRANSISTOR (NPN)
TO-92
FEATURES
Power switching applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
600
400
6
1
0.75
167
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
1 . EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
tf
tS
Test conditions
Min Typ
IC= 0.1mA,IE=0
600
IC= 1mA,IB=0
400
IE= 0.1mA,IC=0
6
VCB=600V,IE=0
VCE=400V,IB=0
VEB=7V,IC=0
VCE=10V, IC=200mA
9
VCE=10V, IC=250uA
5
IC=200mA,IB=40mA
IC=200mA,IB=40mA
VCE=10V, IC=100mA,f=1MHz
5
IC=1A,IB1=IB2=0.2A,VCC=100V
IC=1A,IB1=IB2=0.2A,VCC=100V
Max
100
100
100
40
0.5
1.1
0.5
2.5
Unit
V
V
V
uA
uA
uA
V
V
MHz
us
us
CLASSIFICATION of hFE(1)
Range
9-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION of VCE(sat)
Rank
A
B
Range
<0.25
0.25-0.45
www.cj-elec.com
1
D,Aug,2016
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