3DD13002B Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002/ 3DD13002B TRANSISTOR (NPN)
TO-92
FEATURE
Power dissipation
P_CM:
900
mW (Tamb=25℃)
Collector current
I_CM:
3DD13002: 1 A
3DD13002B: 0.8 A
Collector-base voltage
V_(BR)CBO:
600 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
Ic= 1mA, IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
6
Collector cut-off current
ICBO
VCB= 600V, IE=0
Emitter cut-off current
IEBO
VEB= 6V, IC=0
hFE(1)
VCE= 10V, IC= 200 mA
9
hFE(2)
VCE= 10V, IC= 10 mA
6
Collector-emitter saturation voltage
VCE(sat)
IC=200mA, IB= 40 mA
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
VBE(sat)
IC=200mA, IB=40 mA
VCE=10V, Ic=100mA
fT
5
f =1MHz
tf
IC=1A, IB1=-IB2=0.2A
ts
VCC=100V
TYP
MAX
100
100
40
UNIT
V
V
V
µA
µA
0.5
V
1.1
V
MHz
0.5
µs
2.5
µs
CLASSIFICATION OF hFE₍₁₎
Range
9-15
15-20
20-25
25-30
30-35
35-40