3DD13002-TO-251 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13002 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 1.25 W Tamb=25
Collector current
I_CM :
1A
Collector-base voltage
V_(BR)CBO : 600 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 251
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
600
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
6
Collector cut-off current
ICBO
VCB= 600 V IE=0
Emitter cut-off current
IEBO
VEB= 6
V IC=0
DC current gain
hFE 1
hFE 2
VCE= 10 V, IC= 200 m A
9
VCE= 10 V, IC=250 µA
5
Collector-emitter saturation voltage
VCE(sat)
IC=200m A, IB= 40 m A
Base-emitter saturation voltage
Transition frequency
Fall time
VBE(sat)
IC=200mA, IB= 40 m A
fT
VCE=10V, Ic=100mA
5
f =1MHz
tf
IC=1A, IB1=-IB2=0.2A
Storage time
ts
VCC=100V
V
V
V
100
µA
100
µA
40
0.8
V
1.1
V
MHz
0.5
µs
2.5
µs
CLASSIFICATION OF hFE₍₂₎
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40