 English |
|
|
|
|
|
|
|
| 3DD13001B Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001B TRANSISTOR (NPN)
FEATURE
· power switching applications
TO-92
1. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector -Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
0.2
A
PC
Collector Power Dissipation
0.75
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150
â
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
V(BR)CBO IC= 100μA , IE=0
600
V(BR)CEO IC= 1mA , IB=0
400
V(BR)EBO IE= 100μA, IC=0
7
ICBO
VCB= 600V , IE=0
ICEO
VCE= 400V, IB=0
IEBO
VEB=7V, IC=0
hFE(1)
VCE= 20V, IC= 20mA
14
hFE(2)
VCE= 10V, IC= 0.25 mA
5
VCE(sat)
IC= 50mA, IB= 10 mA
VBE(sat)
IC= 50 mA, IB= 10mA
fT
VCE= 20V, IC=20mA
f = 1MHz
8
tf
IC=50mA, IB1=-IB2=5mA,
tS
VCC=45V
Max
100
200
100
29
0.5
1.2
0.3
1.5
Unit
V
V
V
μA
μA
μA
V
V
MHz
μs
μs
CLASSIFICATION OF hFE(1)
Range 14-17
17-20
20-23
23-26
26-29
www.cj-elec.com
1
D,Jun,2016
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese