 English |
|
|
|
|
|
|
|
| 3DD13001 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – TO 92 PLASTIC ENCAPSULATE TRANSISTORS | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001 TRANSISTOR (NPN)
FEATURES
z Power switching applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
8
0.2
0.625
150
-55~150
Unit
V
V
V
A
W
â
â
TO-92
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= 1mA,IE=0
700
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
400
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA,IC=0
8
Collector cut-off current
ICBO
VCB=600V,IE=0
Collector cut-off current
ICEO
VCE=400V,IB=0
Emitter cut-off current
IEBO
VEB=7V,IC=0
DC current gain
hFE(1)
VCE=20V, IC=20mA
14
hFE(2)
VCE=10V, IC=0.25mA
5
hFE(3)
VCE=5V, IC=0.5A
1
Collector-emitter saturation voltage
VCE(sat) IC=50mA,IB=10mA
Base-emitter saturation voltage
VBE(sat)
IC=50mA,IB=10mA
Transition frequency
Rail time
Storage time
fT
VCE=20V,IC=20mA,f=1MHz
8
tr
IC=0.1A
ts
0.9
Typ Max Unit
V
450
V
V
100
μA
100
μA
100
μA
29
0.4
V
1.1
V
MHz
0.9
μs
2.4
μs
CLASSIFICATION OF hFE(1)
Range
14-17
17-20
20-23
23-26
26-29
CLASSIFICATION OF tS
Range
0.9-2 (μs )
1.4-2.4 (μs )
www.cj-elec.com
1
D,Aug,2016
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese