3DD13001-TO-92 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 1.25 W Tamb=25
Collector current
I_CM : 0.2
A
Collector-base voltage
V_(BR)CBO : 600 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 92
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
600
V
Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
7
V
Collector cut-off current
Collector cut-off current
ICBO
VCB= 600 V , IE=0
ICEO
VCE= 400 V , IB=0
100
A
200
A
Emitter cut-off current
IEBO
VEB= 7 V , IC=0
100
A
DC current gain
hFE 1
VCE= 20 V, IC= 20m A
10
70
hFE 2
VCE= 10V, IC= 0.25 m A
5
Collector-emitter saturation voltage
VCE(sat)
IC= 50mA, IB= 10 m A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 50 mA, IB= 10m A
1.2
V
Transition frequency
Fall time
Storage time
VCE= 20 V, IC=20mA
fT
8
f = 1MHz
tf
IC=50mA,
IB1=-IB2=5mA,
tS
VCC=45V
MHz
0.3
s
1.5
s
CLASSIFICATION OF hFE₍₁₎
Range 10-15 15-20 20-25
25-30
30-35
35-40
40-45
45-50
50-55
55-60
60-65
65-70