3DD13001-TO-251 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 1.2
Collector current
W Tamb=25
I_CM : 0.2
A
Collector-base voltage
V_(BR)CBO : 600 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
TO 251
1.BASE
2.COLLECTOR
3.EMITTER
Parameter
Symbol
Test conditions
MIN
123
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
600
V
Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
7
V
Collector cut-off current
ICBO
VCB= 600 V , IE=0
100
A
Collector cut-off current
Emitter cut-off current
ICEO
VCE= 400 V , IB=0
IEBO
VEB= 7 V , IC=0
200
A
100
A
DC current gain
hFE 1
hFE 2
VCE= 20 V, IC= 20m A
10
VCE= 10V, IC= 0.25 m A
5
Collector-emitter saturation voltage
VCE(sat)
IC= 50mA, IB= 10 m A
40
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 50 mA, IB= 10m A
1.2
V
Base-emitter voltage
VBE
Transition frequency
fT
Fall time
tf
Storage time
tS
CLASSIFICATION OF h_FE(1)
Rank
IE= 100 mA,
VCE= 20 V, IC=20mA
8
f = 1MHz
IC=50mA,
IB1=-IB2=5mA,
VCC=45V
1.1
V
MHz
0.3
s
1.5
s
Range
10-15
15-20
20-25
25-30
30-35
35-40