3DA4793 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TO-220F Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DA4793 TRANSISTOR (NPN)
FEATURES
z Complementary to 3CA1837
z Collector Power Dissipation
P_CM : 2W (Ta=25.)
20 W (Tc=25.)
TO-220F
1. BASE
2. COLLECTOR
3. EMITTE
1₂₃
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
230
V_CEO
Collector-Emitter Voltage
230
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
1000
P_C
Collector Power Dissipation
1.5
T_J
Junction Temperature
150
T_stg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Collector-base breakdown voltage
V_(BR)CBO I_C=0.1mA, I_E=0
230
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA, I_B=0
230
Emitter-base breakdown voltage
V_(BR)EBO I_E=100µA, I_C=0
5
Collector cut-off current
I_CBO
V_CB=230V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE
V_CE=5V, I_C=100mA
100
Collector-emitter saturation voltage
V_CE(sat) I_C=500mA, I_B=50mA
Transition frequency
f_T
V_CE=10V, I_C=100mA
30
Unit
V
V
V
mA
W
℃
℃
Max Unit
V
V
V
10
µA
10
µA
320
1.5
V
MHz
www.cj-elec.com
1
E,May,2016