3CA2050 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-220F Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3CA2050 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z General Purpose Switching and Amplification
TO – 220F
1. BASE
2. COLLECTOR
3. EMITTER
1₂₃
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-180
-160
-6
-1.5
1.5
83
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
f_T
Test conditions
I_C=-1mA,I_E=0
I_C=-10mA,I_B=0
I_E=-100µA,I_C=0
V_CB=-180V,I_E=0
V_EB=-6V,I_C=0
V_CE=-5V, I_C=-0.2A
V_CE=-5V, I_C=-1.5A
I_C=-500mA,I_B=-50mA
VCE=-10V,IC=-0.05A
Min Typ Max Unit
-180
V
-160
V
-6
V
-10
μA
-10
μA
60
240
50
-1
V
50
MHz
CLASSIFICATION OF h_{FE (1)}
RANK
RANGE
R
60-140
O
100-240
www.cj-elec.com
1
C,May,2016