2SK1658 Datasheet, PDF (1/5 Pages) NEC – N-CHANNEL MOS FET FOR SWITCHING

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK1658 N-channel MOSFET
V_(BR)DSS
30 V
R_DS(on)MAX
10Ω@4V
15Ω@2.5V
I_D
100mA
SOT-323
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z Low on-resistance
z Fast switching speed
z Low voltage drive makes this device ideal for
Portable equipment
z Easily designed drive circuits
z Easy to parallel
MARKING
APPLICATION
z Interfacing , Switching
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
VDS
VGS
ID
PD
TJ
Parameter
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Junction Temperature
Tstg
Storage Temperature
RθJA
Thermal Resistance from Junction to Ambient
Value
30
±7
0.1
0.2
150
-55-150
625
Unit
V
V
A
W
℃
℃
℃ /W
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1
B,Apr,2015