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| 2SD999 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD999 TRANSISTOR (NPN)
FEATURES
z Low Collector-Emitter Saturation Voltage
z Mini Power Type Package
z Excellent DC Current Gain Linearity
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE(1)*
hFE(2)*
Collector-emitter saturation voltage
VCE(sat)*
Base-emitter saturation voltage
VBE(sat)*
Base -emitter voltage
VBE*
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
CLASSIFICATION OF hFE(1)
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=30V,IE=0
VEB=5V,IC=0
VCE=1V, IC=100mA
VCE=1V, IC=1A
IC=1A,IB=0.1A
IC=1A,IB=0.1A
VCE=6V, IC=10mA
VCE=6V,IC=10mA
VCB=6V, IE=0, f=1MHz
Min Typ Max
30
25
5
0.1
0.1
90
400
50
0.4
1.2
0.6
0.7
130
22
RANK
RANGE
MARKING
CM
90â180
CM
CL
135â270
CL
CK
200â400
CK
Unit
V
V
V
µA
µA
V
V
V
MHz
pF
www.cj-elec.com
1
C,Oct,2015
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