2SD965A Datasheet, PDF (1/3 Pages) Daya Electric Group Co., Ltd. – SOT-89 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD965A TRANSISTOR (NPN)
FEATURES
z Audio amplifier
z Flash unit of camera
z Switching circuit
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MARKING: 965A
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
40
V
V_CEO
Collector-Emitter Voltage
30
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current -Continuous
5
A
P_C
R_θJA
Collector Power Dissipation
Thermal Resistance From
Junction To Ambient
750
mW
167
℃/W
T_J
Junction Temperature
T_stg
Storage Temperature
150
℃
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=0.1mA, I_E=0
40
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0
30
Emitter-base breakdown voltage
V_(BR)EBO I_E= 10μA, I_C=0
7
Collector cut-off current
I_CBO
V_CB= 10V,I_E=0
Emitter cut-off current
I_EBO
V_EB=7V, I_C=0
h_FE(1) V_CE= 2 V, I_C=1mA
DC current gain
h_FE’(2) V_CE= 2V, I_C = 500mA
230
h_FE(3) V_CE= 2V, I_C =2A
150
Collector-emitter saturation voltage
V_CE(sat) I_C=3A, I_B=0.1A
Transition frequency
f_T
V_CE=6V, I_C=50mA
Out capacitance
Cob
V_CB=20 V , I_E=0, f=1MH_Z
Typ Max
Unit
V
V
V
0.1
μA
0.1
μA
200
800
1
150
50
V
MHz
pF
CLASSIFICATION OF h_FE(2)
Rank
Q
Range
230-380
www.cj-elec.com
R
340-600
1
S
560-800
C,Oct,2015