2SD882 Datasheet, PDF (1/3 Pages) NEC – NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 -3L Plastic-Encapsulate Transistors
2SD882 TRANSISTOR (NPN)
TO-220 -3L
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
40
V
30
V
6
V
3
A
2
W
150
℃
-55-150
℃
1 .EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified )
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)_CBO I_C = 100μA, I_E=0
40
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0
30
Emitter-base breakdown voltage
V(BR)_EBO I_E= 100μA, I_C=0
6
Collector cut-off current
I_CBO
V_CB= 40 V, I_E=0
Collector cut-off current
I_CEO
V_CE= 30 V, I_B=0
Emitter cut-off current
I_EBO
V_EB= 6 V, I_C=0
DC current gain
h_FE
V_CE= 2 V, I_C= 1A
60
Collector-emitter saturation voltage
V_{CE (sat)}
I_C= 2A, I_B= 0.2 A
Base-emitter saturation voltage
Transition frequency
V_{BE (sat)}
f_T
I_C= 2A, I_B= 0.2 A
V_CE= 5V, I_C=0.1A
f =10MHz
Typ Max
Unit
V
V
V
1
µA
10
µA
1
µA
400
0.5
V
1.5
V
90
MHz
CLASSIFICATION OF h_FE
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
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1
B,Aug,2016