2SD880 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SD880 TRANSISTOR (NPN)
TO-220-3L
FEATURES
z Low Frequency Power Amplifier
z Complement to 2SB834
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
60
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current -Continuous
3
A
P_C
Collector Power Dissipation
1.5
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V_(BR)CBO I_C=100µA, I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO
I_C=50mA, I_B=0
60
Emitter-base breakdown voltage
V_(BR)EBO
I_E= 100µA, I_C=0
7
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=7V, I_C=0
DC current gain
h_FE
V_CE=5V, I_C=500mA
60
Collector-emitter saturation voltage
V_{CE (sat)}
I_C=3A, I_B=300mA
Base-emitter voltage
V_BE
I_C=0.5A, V_CE= 5V
Transition Frequency
f_T
V_CE=5 V, I_C=500mA
3
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
70
Turn on time
Storage time
Fall time
t_on
0.8
I_B1=-I_B2=0.2A, I_C=2A
t_s
V_CC=30V, PW=20µs
1.5
t_f
0.8
Max Unit
V
V
V
100
µA
100
µA
300
1
V
1
V
MHz
pF
µs
µs
µs
CLASSIFICATION OF h_FE
Rank
Range
O
60-120
Y
100-200
GR
150-300
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1
B,Nov,2014