2SD879 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 1.5V, 3V Strobe Applications

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SD879 TRANSISTOR (NPN)
TO-92
FEATURES
z In Applications Where Two NiCd Batteries are Used to rovide
2.4V, two 2SD879s are used.
z The charge time is approximately 1 second faster Than that of
germanium transistors.
z Less power dissipation because of low Collector-to-Emitter
Voltage V_CE(sat), permitting more flashes of light to be emitted.
z Small package and large allowable collector dissipation (TO-92,
P_C=750mW).
z Large current capacity and highly resistant to break-down.
z Excellent linearity of h_FE in the region from low current to high
current. Power amplifier applications
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
30
V
V_CEO
10
V
Collector-Emitter Voltage
V_CEX
20
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current –Continuous
3
A
P_C
Collector Power Dissipation
750
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
*_{PULSE TEST}
Symbol
V_(BR)CBO
V_(BR)CEX
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE*
V_CE(sat)*
f_T
C_ob
Test conditions
I_C=10µA , I_E=0
I_C=1mA , V_BE=3V
I_C=10mA, I_B=0
I_E=10µA, I_C=0
V_CB=20V , I_E=0
V_EB=4V , I_C=0
V_CE=2V, I_C=3A
I_C=3A, I_B=60mA
V_CE=10V, I_C=50mA
V_CB=10V,f=1MHz
Min
30
20
10
6
140
Typ Max
1
1
Unit
V
V
V
V
µA
µA
0.4
V
200
MHz
30
pF
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1
C,Dec,2015