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| 2SD874A Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD874A TRANSISTOR (NPN)
FEATURES
z Large collector power dissipation PC
z Low collector-emitter saturation voltage VCE(sat)
z Complementary to 2SB766A
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=2mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
Collector cut-off current
ICBO
VCB=20V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=10V,IC=500mA
VCE=5V,IC=1A
Collector-emitter saturation voltage
VCE(sat) IC=500mA,IB=50mA
Base-emitter saturation voltage
VBE(sat) IC=500mA,IB=50mA
Transition frequency
fT
VCE=10V,IC=50mA,f=200MHz
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Cob
VCB=10V,IE=0,f=1MHz
Q
85-170
YQ
R
120-240
YR
Min Typ Max Unit
60
V
50
V
5
V
0.1
μA
0.1
μA
85
340
50
0.4
V
1.2
V
200
MHz
20
pF
S
170-340
YS
www.cj-elec.com
1
C,Oct,2015
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