 English |
|
|
|
|
|
|
|
| 2SD789 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92MOD Plastic-Encapsulate Transistors
TO â 92M
2SD789 TRANSISTOR (NPN)
TO â 92MOD
1. COLLECTOR
1. EMITTER
FEATURES
2. BASE
z Low Frequency Power Amplifier
z Complementary Pair with 2SB740
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
50
6
1
900
139
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Cob
fT
Test conditions
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=80V,IE=0
VEB=6V,IC=0
VCE=2V, IC=100mA
IC=1A,IB=100mA
VCB=10V,IE=0, f=1MHz
VCE=2V,IC=10mA
Min Typ Max Unit
100
V
50
V
6
V
1
μA
0.2
μA
100
800
0.3
V
20
pF
100
MHz
CLASSIFICATION OF hFE
RANK
B
RANGE
100-200
C
160-320
D
250-500
E
400-800
www.cj-elec.com
1
C,Mar,2016
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese