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| 2SD601A Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
2SD601A
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
SOT-23
FEATURE
ï¬ High hFE
ï¬ Low VCE(sat)
ï¬ For general amplification
ï¬ Complementary to 2SB709A
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
60
50
7
100
200
625
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
Cob
Test conditions
IC=10µA, IE=0
IC=2mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VCE=10V, IB=0
VEB=5V, IC=0
VCE=2V, IC=100mA
VCE=10V, IC=2mA
IC=100mA, IB=10mA
VCE=10V,IC=2mA,f=200MHz
VCB=10V,IE=0,f=1MHz
Min
Typ
Max Unit
60
V
50
V
7
V
0.1
µA
100
µA
0.1
µA
90
160
460
0.3
V
150
MHz
3.5
pF
CLASSIFICATION of hFE(2)
Rank
Range
Marking
Q
160-260
ZQ
R
210-340
ZR
S
290-460
ZS
www.cj-elec.com
1
CA,JNuonv,,22001146
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