2SD596 Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SD596 TRANSISTOR (NPN)
SOT-23
FEATURES
z High DC Current gain.
z Complimentary to 2SB624
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC
Collector Current
700
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1.BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)*
h_FE(2)*
V_CE(sat) *
V_BE *
f_T
Cob
I_C=100μA, I_E=0
I_C= 1mA, I_B=0
I_E= 100μA, I_C=0
V_CB=30V , I_E=0
V_EB= 5V , I_C=0
V_CE= 1V, I_C= 100mA
V_CE=1V, I_C= 700mA
I_C=700mA, I_B=70mA
V_CE=6V, I_C=10mA
V_CE=6V, I_C= 10mA
VCB=6V,IE=0,f=10MHZ
Min Typ
30
25
5
110
50
0.6
170
12
* Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
CLASSIFICATION OF hFE₍₁₎
Marking
DV1
Range
110-180
DV2
135-220
DV3
170-270
DV4
200-320
Max Unit
V
V
V
0.1 μA
0.1 μA
400
0.6
V
0.7
V
MHz
pF
DV5
250-400
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CA,JOucnt,2014