2SD400 Datasheet, PDF (1/3 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-92LM Plastic Package

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SD400 TRANSISTOR (NPN)
FEATURES
z Low-Frequency power Amp, Electronic Governor Applications
TO-92L
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
25
25
5
1
0.75
150
-55-150
Unit
V
V
V
A
W
℃
℃
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
Test conditions
V_(BR)CBO I_C=10µA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=10µA, I_C=0
I_CBO
V_CB=20V, I_E=0
I_EBO
V_EB=4V, I_C=0
h_FE(1) V_CE=2V, I_C=50mA
h_FE(2) V_CE=2V, I_C=1A
V_CE(sat) I_C=500mA, I_B=50mA
V_BE(sat) I_C=500mA, I_B=50mA
f_T
V_CE=10V, I_C=50mA
C_ob V_CB=10V, f=1MHz
Min Typ Max Unit
25
V
25
V
5
V
1
µA
1
µA
60
560
30
0.3 V
1.2 V
180
MHz
15
pF
CLASSIFICATION OF h_FE(1)
Rank
D
Range
60-120
E
100-200
F
160-320
G
280-560
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