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| 2SD313 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SD313 TRANSISTOR (NPN)
FEATURES
z Low Collector-Emitter Saturation Voltage
Vce(sat)=1V(MAX)@IC=2A,IB=0.2A
z DC Current Gain hFE=40~320@IC=1A
z Complementray to PNP 2SB507
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
60
V
60
V
5
V
3
A
1.75
W
150
â
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=100μA, IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
60
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=60V, IE=0
Collector cut-off current
ICEO
VCE=60V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE(1) VCE=2V, IC=1A
40
hFE(2) VCE=2V, IC=0.1A
40
Collector-emitter saturation voltage
VCE(sat) IC=2A, IB=200mA
Base-emitter voltage
VBE
VCE=2V, IC=1A
Transition frequency
fT
VCE=5V, IC=500mA
Collector output capacitance
Cob
VCB=10V, IE=0,f=1MHz
Typ Max Unit
V
V
V
100 μA
1
mA
100 μA
320
1
V
1.5
V
8
MHz
65
pF
CLASSIFICATION OF hFE(1)
Rank
C
Range
40-80
www.cj-elec.com
D
60-120
1
E
100-200
F
160-320
B,Nov,2014
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