2SD2470 Datasheet, PDF (1/3 Pages) Rohm – High-gain Amplifier Transistor (32V, 0.3A)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SD2470 TRANSISTOR (NPN)
FEATURES
z Low Saturation Voltage
TO-92S
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
Symbol
Parameter
V_CBO
Collector-Base Voltage
Value
Unit
15
V
12 ₃
V_CEO
Collector-Emitter Voltage
10
V
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current –Continuous
5
A
P_C
Collector Power Dissipation
400
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V_(BR)CBO I_C=50μA , I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=50μA, I_C=0
I_CBO
V_CB=10V, I_E=0
I_EBO
V_EB=8V, I_C=0
h_FE
V_CE=2V, I_C=2A
V_CE(sat) I_C=3A,I_B=0.1A
f_T
V_CE=6V, I_C=50mA,f=100MHz
C_ob
V_CB=10V,I_E=0,f=1MHz
15
V
10
V
8
V
0.1
μA
0.5
μA
270
820
0.5
V
170
MHz
30
pF
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